“Navitas’ unique GaN technology and its world-renowned monolithically integrated gate driver and feature set will significantly expand our ‘SILICA’ wide-band-gap semiconductor portfolio,” said Gilles Beltran, President Avnet Silica. The company’s latest family of GaNSense half-bridge ICs offers a revolutionary, fully integrated, single component solution that enables AC-DC power supplies to achieve MHz switching frequencies in a broad range of soft-switching applications. Navitas’ leading-edge GaNFast power ICs with GaNSense™ technology integrate power, drive, and control capability, as well as autonomous protection and loss-less current sensing, to deliver the industry’s highest energy efficiency, smallest footprints, and the fastest power-conversion performance. It runs up to 20 times faster than silicon and can also enable up to three times more power handling or three times faster charging capability, as well as its size advantages, leading to potentially 20% lower system cost for designers, engineers and power system architects. GaN is a next-generation semiconductor technology that is growing in importance because of its ability to offer significantly improved performance over conventional silicon semiconductors, while also reducing the energy and physical space needed to deliver that performance. The two companies will work closely together to deliver their combined complementary knowhow to bring a high level of support and expertise to customers across the EMEA region.
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